A radiation-hardened (RH) 300 V gallium nitride (GaN) FET, it delivers improved levels of performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.
As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH has been developed to address a critical need for efficient, compact, and robust front-end power conversion.
With the lowest RDS(on) and gate charge in its class, the EPC7030MSH is said to deliver the highest power current rating among all 300 V rad-hard GaN FETs currently on the market. This makes it suitable for front-end DC-DC converters that must operate under stringent thermal and radiation constraints.
Key Features:
- Rated for 300 V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV
- Lowest RDS(on) and QG of any 300 V rad-hard GaN FET
- Highest current rating in its voltage class
- FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance
- Compatible with existing GaN gate drivers
Target Applications:
- Front-end DC-DC converters in satellite power systems
- Power conversion for higher voltage distribution buses
- Electric propulsion platforms requiring compact, high-performance switching
