Fabricated at Infineon’s own foundry, these transistors have been designed to operate in harsh space environments and is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
These radiation hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes.
Combining the robust performance of GaN HEMTs with Infineon’s experience in developing high reliability applications, the power transistors deliver best-in-class efficiency, thermal management and power density for smaller, lighter, and more reliable space designs.
The devices complement Infineon’s legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalogue of power solutions for space applications.
The first three product variations in the GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion).
Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. This certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
Engineering samples and evaluation boards are available immediately with the final JANS device set to be released in the summer of 2025.
