This is a 40 V, 0.8 mΩ device that’s been designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and synchronous rectifiers.
With industry-leading RDS(on) x QG figure of merit (10 mΩ·nC), zero reverse recovery, and enhanced thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density in a compact 3.3 mm x 2.6 mm PQFN package.
The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.
Engineering samples are available for qualified designs.
