This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.
The EPC2619 has an RDS(on) of just 4 mOhms and comes in a 1.5 mm x 2.5 mm footprint. The maximum RDS(on) x Area of the EPC2619 is 15 mΩ*mm2 – five times smaller than 80V silicon MOSFETs.
This product is designed for a range of motor drive applications. For example: 28V – 48V conversion for eBikes, eScooters and power tools; high density DC-DC converters; solar optimisers; and synchronous rectification converting 12V – 20V for chargers, adaptors, and TV power supplies.
The typical RDS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than 80V silicon MOSFETs. This enables switching frequencies that are 10 times higher than silicon MOSFETs and, without an efficiency penalty, is able to produce higher power density. This makes the EPC2619 suitable for high frequency hard-switching 24V – 48V applications, such as used in buck, buck-boost, and boost converters.
The typical RDS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87 mOhm*nC, two times better than 80V silicon MOSFETs and measn that the EPC2619 can be used for soft-switching applications, such as the primary rectification full bridge for LLC-based DCX DC-DC converters.
The EPC90153 development board is a half bridge featuring the EPC2619 GaN FET. It is designed for 80V maximum device voltage and 30 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This board is designed for optimal switching performance and contains all critical components for easy evaluation.
