Both companies will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors.
These devices will include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector.
Future Visteon EV powertrain applications incorporating Infineon CoolGaN (Gallium Nitride) and CoolSiC (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers.
“Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles,” explained Dr. Tao Wang, Head of the Electrification Product Line of Visteon. “This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem.”
“Visteon is a recognised innovator and an early adopter of new technologies, making them an ideal partner for us,” added Peter Schaefer, Chief Sales Officer Automotive, Infineon. “Together, we will push the boundaries of electric vehicle technology and provide superior solutions to the global automotive industry.”
