Infineon and Stellantis agree MoU on multi-year delivery of SiC chips

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Infineon Technologies and the global automaker Stellantis have signed a non-binding Memorandum of Understanding as a first step in a potential multi-year supply cooperation for silicon carbide (SiC) semiconductors.

According to the agreement, Infineon can reserve manufacturing capacity and supply CoolSiC “bare die” chips in the second half of the decade to the direct Tier 1 suppliers of Stellantis. The potential sourcing volume and capacity reservation have a value of significantly more than €1bn.

Commenting on the agreement Peter Schiefer, Division President Automotive of Infineon, said, “Compared to traditional power technologies, silicon carbide increases the range, efficiency and performance of electric vehicles. With our CoolSiC technology and continuous investments in our manufacturing capacities, we are well positioned to meet the growing demand for power electronics in electromobility.”

Infineon and Stellantis are in talks about delivering the CoolSiC Gen2p 1200 V and CoolSiC Gen2p 750 V chips for electric vehicles under Stellantis brands. The performance, reliability, and quality of CoolSiC technology will allow Stellantis to build vehicles with both longer ranges and lower consumption – and will help the company to standardise, simplify and modernise its platforms.

Infineon is a high-quality and high-volume supplier to the automotive industry and is preparing for the accelerated demand of the industry with significant investments. In 2024, for example, Infineon’s new fab for SiC technologies will start manufacturing in Kulim, Malaysia. It will complement existing manufacturing capacities in Villach, Austria, following Infineon’s multi-site strategy.