Highly-efficient, compact MOSFET modules target solar inverter and EV charging

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SemiQ Inc, a designer, developer, and supplier of silicon carbide (SiC) solutions for efficient, high-performance, and high-voltage applications, has unveiled the QSiC family of devices.

The QSiC 1200V SiC MOSFET modules in full-bridge configurations can deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks.

With a high breakdown voltage exceeding 1400V, the modules in full-bridge configurations can withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum.

Designed using high-performance ceramics, SemiQ’s modules are able to achieve exceptional performance levels, increased power density, and more compact designs - especially in high-frequency and high-power environments and they are, consequently, well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles (EVs) DC-DC converters and power supplies.

In solar inverter applications, SemiQ's technology enables designers to achieve greater efficiency - reaching as high as 98% - as well as more compact designs. It also helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing.

The 1200V MOSFETs also maximise efficiency gains in DC-DC converters while enhancing reliability and minimising power dissipation.

To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests - including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) - are employed to attain the necessary automotive and industrial grade quality standards.

The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.

“At SemiQ, our commitment lies in the meticulous optimisation and customisation of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” said Dr. Timothy Han, President at SemiQ.

SemiQ is set to debut its QSiC product family in SOT-227, half-bridge, and full-bridge packages at the Applied Power Electronics Conference (APEC) in Long Beach, CA, from February 25 to 29, 2024.