These high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation.
The modules benefit from low switching losses, as well as low junction-to-case thermal resistance and all parts have been tested beyond 1350 V, with 100% wafer-level burn in (WLBI).
They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS.
The modules are operational to 175C junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink.
The product family has been launched with 20, 40 and 80mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively.
They conduct a continuous drain current of 29 - 30A*, and a pulsed drain current of 70 A*. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ* and a turn-off switching energy of 0.02 - 0.11 mJ*, with a switching time of 56 - 105 ns*.
The module is available immediately in a 62.8 x 33.8 x 15 mm package including heatsink mountings.
Note: * Figures cited at 25°C (TJ). Variations represent the range across all three products launched. Switching time combines turn-on delay, rise, turn-off delay and fall time.
