GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70% energy savings compared to legacy silicon solutions and GaN OBCs, DC-DC converters and traction inverters are estimated to extend EV range or reduce battery costs by 5%, helping to accelerate the adoption of EVs worldwide.
An EV-upgrade to GaN is expected to reduce road-sector CO2 emissions by as much as 20% per year by 2050, the target of the Paris Accord.
Gallium nitride (GaN) devices are a power semiconductor technology, operating 20x faster than traditional silicon chips. Navitas’ GaNFast power ICs integrate GaN power, GaN drive, protection and control delivering energy savings, high power density, lower cost, and higher reliability.
The Design Centre, which is based in Shanghai, China, hosts a highly-experienced team of power system designers with comprehensive capabilities across electrical, thermal and mechanical design, software development, and complete simulation and prototyping capabilities.
EV customers will be supported worldwide by the new team, from concept to prototype, through to full qualification and mass production.
Hao SUN, the new Sr. Director of the Shanghai Design Centre, said “The design centre will develop schematics, layouts, and firmware for full-function, productizable EV power systems. Navitas will work in partnership with OBC, DC-DC and traction system companies to create innovative, world-class solutions with the highest power density and highest efficiency to propel GaN into mainstream eMobility.”
Another significant benefit of using GaN technology is that manufacturing a GaN power IC has up to a 10x lower CO2 footprint than for a silicon chip.
Considering use-case efficiency and material size and weight benefits, each GaN power IC shipped can save an estimated 4 kg of CO2. Overall, GaN is expected to address a 2.6 Gton/yr reduction in CO2 emissions by 2050.
