GaN Systems and USI Form strategic partnership

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GaN Systems, a leader in GaN (gallium nitride) power semiconductors, has formed a strategic partnership with ASE Technology’s subsidiary, Universal Scientific Industrial (USI), to co-develop GaN power modules for the EV market.

The move comes as the electric vehicle shifts from using legacy silicon power transistors to GaN, and as power modules are also transitioning to meet the demands of low heat loss and superior voltage control in the power conversion process. GaN power modules enable higher efficiency, increased EV range, and increased EV performance.

Commenting on the announcement, JP Shi, USI’s SVP of Strategic Investment said, “We have worked with GaN Systems for years and are impressed with the company’s leadership in high reliability, automotive-qualified GaN – an essential building block for EVs. We look forward to building optimised and highly efficient modules that will be the cornerstone of best-in-class DC-DC converters, on-board chargers, and traction inverters.”

USI has more than 20 years of experience in power electronics manufacturing of various package types and high-reliability modules, including power modules, IPMs (intelligent power modules), DC/DC converters, and RF power transistors. USI has been recognised by OEMs and Tier-1 suppliers in the automotive sector by introducing the automotive functional safety standard ISO26262 and being certified with Chapters II and VII for manufacturing.

Stephen Coates, GM and VP of Operations at GaN Systems, said, “USI joins our ecosystem of partners working to bring leading GaN technology to EVs. Through this partnership, we bring together USI’s leadership in complex, high-power integrated modules with our high-reliability GaN semiconductor technology to build truly disruptive, game-changing modules for next generation EVs. Building on our deep industry relationships with leaders like BMW, Toyota, and Vitesco, GaN Systems and USI will work together to accelerate GaN adoption across the EV platform.”