The 70 mOhm NV6128 represents a 66% increase in current capability, in a small, 6 x 8 mm PQFN package with a proprietary, integrated cooling pad for high-efficiency, high-density power systems.
Gallium nitride (GaN) is a next-generation semiconductor technology that is able to run up to 20x faster than silicon (Si), and enables up to 3x more power or 3x faster charging in half the size and weight. GaNFast power ICs integrate GaN power and drive plus protection and control to deliver, what the company describes as, a faster, simpler and higher-power performance.
“GaNFast power ICs have been broadly adopted by tier-1 names like Lenovo, Dell, OPPO and Xiaomi for fast-charging mobile adapters up to 200W, with over 13,000,000 shipped and zero failures,” said Gene Sheridan, Navitas CEO and co-founder. “With the higher-power NV6128, we have extended the effective power range to 500W for the consumer market and are now looking beyond that to multi-kW data center, eMobility and new energy applications.”
The NV6128 is rated at 650V for nominal operation plus a high, 800V peak capability for robust operation during transient events. The GaN gate is fully protected and the whole device rated at an electrostatic discharge (ESD) specification of 2kV.
According to Dan Kinzer, Navitas CTO/COO and co-founder, “Compared to current tier-1 OEM laptop adapters using old silicon in traditional diode rectification and boost PFC topologies at 50-70kHz, the GaNFast NV6128 enables a modern high-speed totem-pole architecture and complete 300W solutions at over 1.1W/cc. That’s up to 3x smaller and lighter with existing 200kHz control. When you crank up the speed to MHz+, you get another major step-increase in power density.”
For power electronics designers, the NV6128 and all the GaNFast power IC family offer easy-to-use, high-speed, high-efficiency solutions for 200-500W applications such as all-in-one PCs, TVs, game consoles, eMobility chargers (eScooters, eBikes), gaming laptops and more.
