Engineering publications brought to you by Mark Allen

Memory

SG-MONOS could enable MCUs with 100Mbyte of on chip flash

New way to write magnetic information

EEPROM suits identification applications

Spin Transfer Technologies and Tokyo Electron announce engineering collaboration

Fast-moving magnetic particles could enable new form of data storage

Enhancing the capacity of memory devices

Samsung unveils first eMRAM test chip based on 28nm FD-SOI process

Cadence unveils memory design and verification tool

Microchip launches low-voltage 64-megabit serial quad I/O SuperFlash memory

Ideal memory material conceptualised

Researchers create magnetoelectric memory

Phenomenon to improve data processing and storage