According to ROHM, for power semiconductors there is often a trade-off relationship between lower ON resistance and short-circuit withstand time, which is required to strike a balance for achieving lower power losses in SiC MOSFETs.
ROHM has been able to successfully improve this trade-off relationship and reduce ON resistance per unit area by 40% over conventional products, but without sacrificing short-circuit withstand time by further improving an original double trench structure.
In addition, ROHM has been able to significantly reduce the parasitic capacitance (which is a problem during switching) making it possible to achieve 50% lower switching loss over our previous generation of SiC MOSFETs.
As a result, ROHM’s new 4th Generation SiC MOSFETs are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies.
Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.
