The growing demand for higher efficiency and power density is driving the adoption of higher input voltages in industrial and consumer applications, as a result, MOSFETs are expected to provide not only low ON resistance, but high withstand voltages as well.
Two types of MOSFETs exist: N-channel and P-channel. Although N-channel types generally feature higher efficiency when used in the high side, a gate voltage higher than the input voltage is needed, complicating circuit configuration. On the other hand, P-channel MOSFETs can be driven with a gate voltage lower than the input voltage, simplifying circuit configuration considerably while reducing design load.
In response, ROHM has developed low ON resistance -40V/-60V P-channel MOSFETs compatible with 24V input, utilizing advanced 5th gen refined process. Based on ROHM’s P-channel MOSFET structure, these new products leverage refined process technology to achieve the lowest ON resistance per unit area in their class. This translates to 62% lower ON resistance vs conventional products for -40V new products and 52% for the -60V new products.
Quality has also been improved by optimising the device structure and adopting a new design that mitigates electric field concentration. As a result, both high reliability and low ON resistance (which are typically in a trade-off relationship) are achieved. These solutions contribute to stable long-term operation in industrial equipment demanding exceptional quality.
ROHM continues to develop a variety of packages for a wide range of applications, including products optimised for the automotive sector. In addition to these 5th gen P-channel MOSFETs, to strengthen its lineup for 5G base stations and data center servers, where demand is growing, the company is also developing higher efficiency N-channel MOSFETs. These products contribute to reducing application design load while increasing higher efficiency and reliability.
