Radiation-hardened MOSFET targets space applications

Microchip Technology has announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for commercial aerospace and defense space applications.

Intended for space applications operating in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events, the M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls and general-purpose switching.

The device is able to withstand the harsh environments of space and meets all the requirements of MIL-PRF19500/746 with enhanced performance, and the M6 MRH25N12U3 MOSFET has been designed for future satellite system designs as well as serving as an alternate source in existing systems.

The M6 MRH25N12U3 is part of Microchip’s broad portfolio of aerospace, defense and space technology that includes field programmable gate arrays (FPGAs), microprocessor integrated circuits (ICs), linear ICs, power devices, discretes and power modules that integrate both SiC and Si power solutions