These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification.
This certification makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC-DC converters, heating ventilation and air-conditioning systems (HVAC).
The switches are housed in the surface mounted D2PAK-7 package, which is more suitable for automated assembly operations than through-hole devices.
RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction losses. However, concentrating on the nominal value, neglects the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable rise of conduction losses.
That temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB.
Nexperia has identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
This feature enables customers to address higher output power in their applications achieved with a higher nominal 25 °C rated RDS(on) from Nexperia compared to other vendors without sacrificing performance.
Nexperia said that it was planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ RDS(on) SiC MOSFETs in 2025.
