GaN Systems launches higher performance transistor

1 min read

GaN Systems, a developer of GaN (gallium nitride) power semiconductors, has introduced a new transistor to its growing portfolio of GaN power transistors.

The GS-065-018-2-L expands the company’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating.

The addition is intended to help designers looking to improve efficiency, thermal management, and power density performance while increasing design flexibility and cost-effectiveness. The transistor’s industry-standard 8×8 mm PDFN form factor will help customer adoption, scalability, and commercialisation, according to the company.

The GS-065-018-2-L is a 650V, 18A, 78 mΩ bottom-side cooled transistor has been developed for smaller and lighter consumer adapters for laptops and gaming consoles and higher power density and efficiency in televisions and server SMPS.

Lower RDS(on) means lower power loss and higher power rating, resulting in higher efficiency and power density. This new product targets 100W – 800W adapters, consumer and industrial power supplies, LED drivers, Bridgeless Totem Pole PFC circuits and motor drives.

“Our continuous design advancements are making GaN power semiconductors the transistor of choice in power electronics,” said Jim Witham, CEO of GaN Systems. “We are committed to continuing to lead the industry in application expertise and product innovation to empower our customers to maximize the performance of their products.”

The products are now available for purchase at GaN Systems’ distributors.