X-FAB adds CMOS integration option to its galvanic isolation solution

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X-FAB Silicon Foundries has announced that it has made further significant progress with its galvanic isolation technology.

Building on X-FAB’s 2018 introduction of its advanced process optimised for robust discrete capacitive or inductive couplers, the process can now be used to bring existing galvanic isolation elements directly together with active circuits based on its XA035 technology. This approach will allow more flexibility in the design of isolation products, addressing emerging opportunities in renewable energy, EV powertrains, factory automation, and industrial power. 

Based on a 350nm process node, XA035 is highly suited to the fabrication of automotive sensors and high-voltage industrial devices. The high-voltage signal isolation capabilities it can support means long-term operational performance is maintained, even in demanding environments. It will enable the manufacture of robust components that are AEC-Q100 Grade 0 compliant and industrial-rated, such as digital isolators, isolated gate drivers, and isolated amplifier ICs. X-FAB provides a comprehensive PDK that supports the new and improved process technology for all major EDA vendors.

“We see a growing demand from our customers for robust foundry solutions to design galvanically isolated products. X-FAB has been in production for several years with its proven high-reliable isolation layer for discrete coupler implementations,” said Tilman Metzger, Marketing Manager for High-Voltage Products at X-FAB. “By leveraging the very same process module we can offer more flexibility in designing such products by enabling the direct integration with CMOS circuits on the same die.”