These SMDs combine reliability and performance advantages derived from Transphorm’s patented SuperGaN d-mode two-switch normally-off platform in package configurations, which are typically used by competitive e-mode GaN devices. Consequently, these six devices can serve as a first design source or as pin-to-pin drop-in replacements and/or secondary sources for e-mode GaN solutions.
For power systems that require additional thermal performance from the SuperGaN platform, Transphorm also offers SMDs in optimised Performance packages. All devices provide designability and drivability regardless of packaging given the d-mode configuration’s use of a low-voltage Silicon MOSFET paired with the GaN HEMT. This platform configuration also allows for the use of standard, off-the-shelf controllers and/or drivers adding to the Transphorm portfolio’s superior drivability and designability.
“Transphorm continues to produce a strong GaN device portfolio, one that covers the widest power spectrum today. We’ve solidified our low power strategy with the release of these Industry Standard packages, which follow the recently announced SiP developed with Weltrend Semiconductors,” said Philip Zuk, Senior Vice President of Business Development and Marketing, Transphorm. “Customers now have a choice of how they can tap into the advantages of SuperGaN whether it be through Performance packages, pin-to-pin e-mode compatible Industry Standard packages, or a System-in-Package.”
According to Transphorm, replacing e-mode devices with SuperGaN d-mode FETs has proven to deliver higher performance and lower operating temperature through lower conduction losses, resulting in longer lifetime reliability. This is due to the fundamental intrinsic superiority of the d-mode GaN normally-off device vs. the e-mode GaN normally-off device.
One example of such validation can be found in a recent head-to-head comparison wherein 50 mΩ e-mode was replaced by 72 mΩ SuperGaN technology in a 280 W gaming laptop charger.
In the charger analysis, the SuperGaN FETs operated at the controller’s output voltage range (whereas e-mode had to level shift) with cooler temperatures. The SuperGaN temperature coefficient of resistance (TCR) is approximately 25 percent lower than that of e-mode, contributing to the lower conduction losses. Additionally, the peripheral component count was reduced by 20%, suggesting a lower BOM cost.
Key features shared across devices include:
- JEDEC qualified
- Dynamic RDS(on)eff production tested
- Market-leading robustness with wide gate safety margins and transient over-voltage capabilities
- Very low QRR
- Reduced crossover loss
The 72 mΩ FET has been designed for use in datacom, broad industrial, PV inverter, servo motor, computing systems, and general consumer applications and the 150, 240, and 480 mΩ FETs are optimally designed for use in power adapter, low power SMPS, lighting, and low power consumer applications.
