The power MOSFETs offer 2x lower output charge, near-zero reverse-recovery and ultra-low Qoss enabled by AND’s proprietary channel engineering technology. In addition, these power MOSFETs are able to offer superior specific on-resistance (< 5 mOhm-mm2 @ 30V BVDSS) at gate drive as low as 2.5V as well as low leakage currents and near-ideal sub-threshold slope made possible by AND’s device architecture.
These characteristics can help to substantially reduce parasitic losses incurred in power management systems and will help to improve power management and conversion efficiency in numerous applications including data centres, automotive, electric motor drives, microinverters for renewable energy systems and many others in industrial and consumer markets.
In applications such as DC-DC power conversion, AND’s technology offers a number of advantages enabled by its novel device architecture.
Near-zero reverse recovery and low output capacitances eliminate the need for integrated or standalone Schottky clamp diodes. These efficiency enhancing characteristics make the technology attractive for higher frequency voltage conversion applications not typically supported by conventional Si MOSFETs.
The high frequencies enabled by these power MOSFETs, in turn, drive reduction of passive component sizes to achieve small form factor power modules that support further system level efficiency gains.
AND will offer wafer scale and standard package products ranging from 15-80V for industrial and consumer applications. AND said that it plans to expand the offering to span the 200-1000V range with a family of products produced at SkyWater for electric vehicle, renewable energy and various industrial applications.
Additionally, through a technology licensing agreement, SkyWater will offer this power MOSFET technology process flow to foundry customers.
“AND has developed a unique technology that brings the benefits of GaN-like performance to mainstream Si MOSFETs,” said Leo Mathew, CEO and co-founder of AND. “SkyWater is an ideal partner to bring this industry breakthrough to realization in an IP-secure development and production environment.”