CoolSiC MOSFET 1700 V SMD targets high voltage auxiliary power supplies

Infineon Technologies is extending it CoolSiC MOSFET range offering a new 1700 V class with its proprietary trench semiconductor technology.

The CoolSiC MOSFETs 1700 V are targeting auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure and HVDC systems.

Such low-power applications usually operate below 100 W and designers very often prefer a single-ended flyback topology. With the new CoolSiC MOSFETs 1700 V in SMD package, this topology is enabled for DC-link connected auxiliary circuits up to 1000 V DC input voltage. High efficiency and high reliability auxiliary converters using a single-ended flyback converter can now be implemented in three-phase power conversion systems.

The 1700 V blocking voltage removes concerns regarding overvoltage margin and reliability of power supplies. CoolSiC trench technology features lowest device capacitances and gate charges for transistors of this voltage class. The result is a power loss reduction by more than 50 percent and 2.5 percent higher efficiency compared to state-of-the art 1500 V silicon MOSFETs. The efficiency is 0.6 percent higher, compared to other 1700 SiC MOSFETs. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink.

The 1700 V CoolSiC trench MOSFETs are optimised for flyback topologies with +12 V / 0 V gate-source voltage compatible with common PWM controllers. As a result, they do not need a gate driver IC and can be operated directly by the flyback controller. On-resistance ratings are 450 mΩ, 650 mΩ or 1000 mΩ.

The new 7 lead D²PAK SMD package offers extended creepage and clearance distances over 7 mm. With that, it meets the usual 1700 V application requirements and PCB specifications, minimizing isolation efforts for the design.