These GaN FETs are suitable for the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters and have been designed for multi-kilowatt-class applications. These 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input to significantly reduce switching power loss while retaining the operating simplicity of silicon FETs.
Offered in TOLT, TO-247 and TOLL package options, the devices are intended to give engineers the ability to customise their thermal management and board designs for specific power architectures.
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the SuperGaN platform, a proven depletion mode (d-mode) normally-off architecture that was pioneered by Transphorm, which Renesas acquired in June 2024.
Based on low-loss d-mode technology, these devices offer improved levels of efficiency compared to silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimise power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.
Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density.
These advantages make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.
Available in compact TOLT, TO-247 and TOLL packages, they provide a broad range of packaging options to accommodate thermal performance and layout optimisation for power systems ranging from 1kW to 10kW, and even higher with paralleling.
The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
As with previous d-mode GaN products, these devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN.
As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialised drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.
GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fuelled by demand from electric vehicles (EVs), inverters, AI data centre servers, renewable energy, and industrial power conversion.
