Engineering publications brought to you by Mark Allen

Memory

CNT based memory developer raises another $21million

RRAM based low power serial EEPROMs offer security features

imec does 8nm STT-MRAM, claims ‘manufacturable’ at 10nm

Perovskite’s magnetic properties to improve hard drives

OUTLOOK 2017: Next generation stacked cell structures and new standards are taking flash memory into the future

OUTLOOK 2017: On the fast track to flash first data centres

Toshiba unveils e•MMC and UFS memories with updated controllers

Astute sets up memory division, signs Alliance

Low cost, low risk memory

DRAM replacement technology could save power, area

DDR memory power solution now fully integrated

Execute in place memory updated for IoT edge applications