UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has unveiled four new Junction Barrier Schottky (JBS) diodes to complement its FET and JFET transistor products.

The UJ3D 1200V and 1700V devices are part of the company’s 3rd generation of SiC Merged-PiN-Schottky (MPS) diodes.

These SiC SB diodes are highly optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. Having a >8.8mm clearance between the anode and the cathode means they are better at coping with high pollution environments where voltage transients are likely to be present. In high current situations, the novel PN junction arrangement featured enables the injection of additional charge carriers. As a result, the diodes can withstand much higher surge currents than competing devices (up to 12x the rated current).

There is a 1700V 25A-rated option, plus three 1200V devices in 10A, 20A and 50A-rated options. Fully compliant with the AEC-Q101 automotive standard, all SiC diodes come in a compact TO247-2L package format and in die form. Applications that will benefit most from these new SiC diodes include fast-charge electric vehicle (EV) charging access points, industrial motor drives and solar energy inverters.