Powered by proprietary trench-assisted planar SiC MOSFET technology these modules have been designed and validated for demanding high-power environments, prioritising reliability and high-temperature performance.
Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimisers, energy storage systems (ESS), industrial welding, and induction heating.
The portfolio of 1200V SiCPAK power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
The SiCPAK modules have demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules.
Navitas’ GeneSiC ‘trench-assisted planar’ SiC MOSFET technology provides an industry leading performance over temperature, enabling up to 20% lower losses, cooler operation, and improved robustness to support long-term system reliability.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the low power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competitor devices.
Additionally, all GeneSiC SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The 1200V SiCPAK power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules.
Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Modules are available for mass production.
