Navitas’ Gen-3 Fast SiC MOSFETs to accelerate AI growth & EV charging

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Navitas Semiconductor, a developer of next-generation GaNFast nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has unveiled a new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs.

Credit: Navitas

These devices have been optimised for faster switching speeds, greater efficiency, and increased power density for applications such as AI data centre power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS).

The company’s portfolio covers industry-standard packages from D2PAK-7 to TO-247-4, and is designed to mee the demands of high-power, high-reliability applications.

The G3F family has been optimised for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems, according to Navitas. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.

The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology that delivers improved levels of performance along with enhanced robustness and manufacturability. These G3F MOSFETs deliver higher-efficiency with higher-speed performance, enabling up to 25°C lower case temperature, and a longer life span.

The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in lower power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures.

Additionally, all GeneSiC MOSFETs have been reported to have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling.

Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% has been achieved, meeting the ‘Titanium Plus’ efficiency standards, now mandatory in Europe.

For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a power density of 3,5 kW/L and a peak efficiency of 95.5%.

“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”