Infineon unveils space-qualified F-RAM for extreme environments

Infineon Technologies is making available the space industry’s first radiation-hardened (rad hard), serial interface Ferroelectric RAM (F-RAM) for extreme environments.

The devices deliver increased reliability and data retention and are more energy efficient than non-volatile EEPROM and serial NOR Flash devices for space applications.

The addition of a QML-V qualified F-RAM to Infineon’s memory portfolio adds instant non-volatile write technology and adds over 100-year data retention to space applications. As a direct replacement for serial NOR flash and EEPROMs, rad hard F-RAM is suitable for data logging of mission critical data, telemetry storage, and command and control calibration data storage.

The new device also provides boot code storage solutions for microcontrollers, FPGAs and ASICs.

Support for the industry standard Serial Peripheral Interface (SPI) protocol improves ease-of-use and supports a smaller footprint and lower pin count. Serial protocols are increasingly used in satellite and space applications, with multiple suppliers now offering SPI capable space-grade processors, FPGAs and ASICs.

The 2 Mb density F-RAM with SPI is the first in its family of rad hard non-volatile F-RAMs. The devices have virtually infinite endurance with no wear levelling, with 10 trillion read/write cycles and 120 years data retention at 85°C, at an operating voltage range of 2.0 V to 3.6 V. The lowest operating current is 10 mA maximum, with an extreme low programming voltage of 2 V.

The rad hard F-RAMs are also suitable for avionic and other applications that require military standard temperature grades reaching from -55°C to 125°C. Additional features include a small footprint with 16-pin ceramic SOP packaging.

The DLAM QML-V qualified devices have superior radiation performance of:

  • TID: >150 Krad (Si)
  • SEL: >114 MeV·cm 2/mg @115°C
  • SEU: Immune
  • SEFI: <1.34 * 10-4 err/