The CoolSiC MOSFET has been further extended to address the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Amongst them are server, telecom and industrial, energy storage and battery formation and EV-charging.
The CoolSiC MOSFET 650 V devices are rated from 27 mΩ to 107 mΩ and are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. As for all previously launched CoolSiC MOSFET products, the new family of 650 V devices are based on Infineon’s trench semiconductor technology. Maximizing the strong physical characteristics of SiC, this ensures that the devices offer reliability, best-in-class switching and conduction losses. Additionally, they feature highest transconductance level (gain), threshold voltage (V th) of 4 V and short-circuit robustness.
The 650 V CoolSiC MOSFETs also offer other benefits such as switching efficiency at higher frequencies and improved levels of reliability. Thanks to the very low on-state resistance (R DS(on)) dependency on temperature they feature an excellent thermal behaviour. The devices offer robust and stable body diodes retaining a very low level of reverse recovery charge (Q rr), roughly 80 percent less compared to the best superjunction CoolMOS™ MOSFET.
The commutation-robustness helps in achieving very easily an overall system efficiency of 98 percent, e.g. through the usage of continuous conduction mode totem-pole power factor correction (PFC).
To ease the application design using CoolSiC MOSFETs 650 V and to ensure high performance operation of the devices, Infineon is offering dedicated 1-channel and 2-channel galvanically isolated EiceDRIVER gate-driver ICs. This solution – combining CoolSiC switches and dedicated gate-driver ICs – helps lowering system costs as well as total cost of ownership and enables energy efficiency gains.
The CoolSiC MOSFETs are able to work seamlessly with other ICs from Infineon’s EiceDRIVER gate-driver family.