The devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface mount device (SMD) portfolio and a 650 V CoolSiC MOSFET product family, both to be launched soon.
With these products, Infineon says it will be addressing the fast growing demand for energy-efficient silicon carbide (SiC) solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions and photovoltaic inverters.
The new discrete devices build on a trench SiC MOSFET semiconductor process, developed to allow for both low losses in the application and high reliability in operation. Furthermore, according to related application profiles, gate-source operating voltages are adopted for discrete package solutions. A benchmark low dynamic loss is said to enable high efficiency with a simple unipolar gate drive scheme.
CoolSiC trench technology features an exclusively high threshold voltage rating (V th) larger than 4 V combined with a low Miller capacitance. For this reason, Infineon says the CoolSiC MOSFETs exhibit best-in-class immunity against unwanted parasitic turn-on effects compared to other SiC MOSFETs on the market.
Together with a turn-on gate-source voltage of +18 V with 5 V margin to maximum rated voltage of +23 V, Infineon adds that the SiC discrete MOSFETs deliver an advantage over silicon (Si) IGBTs, super-junction MOSFETs as well as over other SiC MOSFETs at highest level.
Including a robust body diode rated for hard commutation, the CoolSiC MOSFET portfolio is designed to offer engineers a pathway for highest energy efficiency and making “more out of less”.