Automotive 650V CoolSiC Hybrid Discrete

Infineon has announced the launch of the 650 V CoolSiC Hybrid Discrete for automotive.

The device contains a 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode providing a performance boost as well as high reliability and supports high system integrity in addition to bi-directional charging. The device is intended for fast switching automotive applications such as On-Board Chargers (OBC), Power Factor Correction (PFC), DC-DC and DC-AC converters.

The integrated fast-switching 50 A IGBT enables MOSFET-like turn-off behaviour outperforming pure silicon solutions. In contrast to regular silicon carbide MOSFETs, the plug-and-play solution for a fast time-to-market achieves 95 to 97 percent system efficiency at a lower cost level. In addition, the CoolSiC Schottky diode supports reduced turn-on and recovery losses. In comparison to pure silicon designs, the device has been designed for hard commutation with 30 percent lower losses. With its low cooling requirements, the diode also provides an excellent cost-performance trade-off on the system level.

The CoolSiC Hybrid Discrete for Automotive is now available.