The company’s highly specialised products form the basis for the manufacture of electronic components worldwide in areas such as electromobility or green technologies such as photovoltaics and wind power.
SiCrystal will create new, additional production space in the north-east of Nuremberg, directly opposite its existing site and the new building will offer an additional 6,000 square meters of production space and will be equipped with state-of-the-art technology to further optimise the production of silicon carbide wafers. Its close proximity to the existing plant will ensure close integration of the production processes.
SiCrystal's total production capacity, including the existing building, will be approximately three times higher in 2027 than in 2024.
“The new space will significantly increase the production capacity for SiC substrates," said Dr. Robert Eckstein, CEO of SiCrystal.
"Our recent groundbreaking ceremony marked an important milestone for SiCrystal and underlines our commitment to the metropolitan region. In this way, we can continue to supply innovative products of the highest quality for our customers in the future and make a positive contribution to global sustainability," said Dr. Erwin Schmitt, COO of SiCrystal. "With the additional production capacities, we will strengthen our market position and make an important contribution to technological development in the semiconductor industry."
The construction work is scheduled to be completed by the beginning of 2026. And will create new jobs in the region.
SiCrystal is a subsidiary of the Japanese ROHM Group and these wafers are of crucial importance for the production of high-performance semiconductor components. By using SiC, it is possible to deliver higher efficiency, lower energy consumption and improved performance in various applications such as electric vehicles, solar energy, and industrial equipment.
