Samsung mobile DRAM uses 512 pins

To boost data transmission, the device uses 512 pins for data input and output, compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. Including the pins used for sending commands and regulating power supply, Samsung says the DRAM is designed to accommodate approximately 1200 pins. The device has been designed to transmit data at 12.8GB/s, which, according to Samsung, increases the bandwidth of mobile DDR DRAM (1.6GB/s) eightfold, while reducing power consumption by approximately 87%. The bandwidth is also said to be four times that of LPDDR2 DRAM (which is approximately 3.2GB/s). Byungse So, Samsung's senior vice president, memory product planning and application engineering, said the launch is part of a campaign to 'aggressively expand' the company's high performance mobile memory product line and to boost its presence in the mobile industry. "Following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high performance mobile products," he said. Samsung also plans to provide 20nm class 4Gb wide I/O mobile DRAM in 2013.