Samsung announces 30nm 4Gb LPDDR2 DRAM
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Samsung Electronics has started production of what it claims is the industry's first 4Gb, low power double data rate 2 (LPDDR2) DRAM utilising 30nm class technology.
The company expects the chip to help deliver thinner and lighter Smartphones and tablets with longer battery life. Compared to the previous 40nm 2Gb LPDDR2 DRAM, the new device is designed to increase productivity by 60% and according to the telecommunications specialist, delivers a data transmission speed of 1,066Mb/s - more than double that of today's MDDR. In addition, it provides a 20% package height reduction from 1.00mm to 0.8mm and consumes 25% less power.
"Samsung will continue to take the initiative in accelerating growth of the market by providing high performance, high density green memory products as often and as early as possible," said Wanhoon Hong, executive vice president, memory sales and marketing, Samsung Electronics. "Mass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high performance mobile devices into the market."
Samsung plans to produce the 4Gb LPDDR2 chip based 1GB (8Gb) packages beginning this month and plans to produce the 2GB (16Gb) packages consisting of four 4Gb devices next month.
