Samsung Electronics has begun production of what it claims is the industry's first high performance toggle DDR2 multi level cell (MLC) memory chip.
Designed to support the requirements of mobile devices such as smartphones, tablets and SSDs, the new NAND flash chip features a 64Gbit density and utilises 20nm class process technology. It comes equipped with a toggle DDR2 interface and is designed to transmit data at a bandwidth of up to 400Mb/s. According to Samsung, it provides a 10 times increase in performance compared to the 40Mb/s single data rate NAND flash memory on the market today. The chip's 400Mb/s bandwidth is expected to better support the ongoing shift toward advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB3.0 and SATA 6.0Gb/s. "With this 20nm class, 64Gbit, MLC memory chip, Samsung is leading the market, which is evolving to fourth generation smartphones and SATA 6Gb/s SSDs," claimed Wanhoon Hong, executive vice president, memory sales and marketing, Samsung Electronics. "We will continue to aggressively develop the world's most advanced toggle DDR NAND Flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide."