NXP looks to advance 5G with new Gallium Nitride fab in Arizona

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NXP Semiconductors has announced the opening of its 150mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, said to be the most advanced fab dedicated to 5G RF power amplifiers in the US.

The factory brings together NXP’s expertise in RF power and high-volume manufacturing to deliver more streamlined innovation that will be capable of supporting the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defence markets.

Speaking at the opening of the facility Kurt Sievers, NXP CEO said, “Today marks a critical milestone for NXP. By building this facility and tapping key talent in Arizona, we are able to bring focus to GaN technology as part of driving the next generation of 5G base station infrastructure.”

With 5G, the density of RF solutions required per antenna has exponentially increased and GaN power transistors have emerged to address this market, delivering significant improvements in both power density and efficiency.

The fab is set to ramp quickly with NXP leveraging its Chandler-based team's expertise in compound semiconductor manufacturing.

Arizona Governor Doug Ducey said, “With this new state-of-the-art manufacturing facility in Chandler, Arizona is set to expand its reputation as a high-tech manufacturing hub and a pioneer in 5G innovation, We’re grateful to NXP for bringing more jobs and investment to our state.”

The internal factory will serve as an innovation hub that facilitates collaboration between the fab and NXP’s onsite R&D team. NXP engineers will be able to rapidly develop, validate and protect inventions for current and future generations of GaN devices, resulting in shorter cycle times for NXP GaN innovations.

“I am excited by the opening of our new facility in Chandler as it underscores NXP’s decades-long commitment to GaN and the communications infrastructure market,” said Paul Hart, Executive Vice President and GM of the Radio Power Group at NXP.