Nexperia and Mitsubishi Electric to jointly develop discrete SiC MOSFETs

1 min read

Nexperia has entered into a strategic partnership with Mitsubishi Electric Corporation to jointly develop silicon carbide (SiC) MOSFETs.

This collaboration will see Nexperia and Mitsubishi Electric join forces to push the energy efficiency and performance of SiC wide bandgap semiconductors, while also responding to the rapidly growing demand for high efficiency discrete power semiconductors.

Mitsubishi Electric’s power semiconductor products help to deliver significant energy savings in a range of segments, including automotive, home appliances, industrial equipment and traction motors and it has established a reputation as an industry leader in the provision of reliable and high-performance SiC modules.

Nexperia has experience in component development, production and qualification. As a high-volume provider of silicon semiconductors for basic commercial applications, Nexperia now also offers high-quality wide bandgap devices designed to meet the growing demand for highly efficient and reliable power semiconductors.

“This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia’s silicon carbide journey” according to Mark Roeloffzen, SVP & General Manager Business Group Bipolar Discretes at Nexperia. “Mitsubishi Electric has a strong track record as a supplier of technically proven SiC devices and modules. Combined with Nexperia’s high-quality standards and expertise in discrete products and packaging, we will certainly generate positive synergies between both companies - ultimately enabling our customers to deliver highly energy efficient products in the industrial, automotive or consumer markets they serve.”

Dr. Masayoshi Takemi, Executive Officer, Group President, Semiconductor & Device of Mitsubishi Electric, said, “Nexperia is a leading company in the industry with proven technology in high quality discrete semiconductors. We are delighted to have reached an agreement on a partnership for joint development that leverages the semiconductor technologies of both companies.”