Micron unveils plans for a US-based megafab

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Micron Technology, the only US-based manufacturer of memory, is to build the largest semiconductor fabrication facility in the history of the United States.

The company has unveiled plans for a new megafab that will increase domestic supply of leading-edge memory and create thousands of jobs in the region.

Micron said that it plans to $100bn over the next 20-plus years to construct a megafab in Clay, New York, with the first phase investment of $20bn planned by the end of this decade. The investment in Onondaga County, New York, will complement the company’s previously announced high-volume manufacturing fab in Boise, Idaho.

Micron will design, build and operate the facility in accordance with its sustainability goals and the site could eventually include four 600,000 square foot cleanrooms, for a total of 2.4 million square feet of cleanroom space.

Micron said that the investment was part of its strategy to gradually increase American-made leading-edge DRAM production to 40% of the company’s global output over the next decade. Site preparation work will start in 2023, construction will begin in 2024 and production output will ramp in the latter half of the decade, gradually increasing in line with industry demand trends.

By locating DRAM production in the US customers will benefit from a more resilient, secure and geographically diverse supply chain.

Micron President and CEO Sanjay Mehrotra said, “This historic leading-edge memory megafab in Central New York will deliver benefits beyond the semiconductor industry by strengthening US technology leadership as well as economic and national security, driving American innovation and competitiveness for decades to come.”

Micron will receive over $5.5 billion in incentives from the state of New York over the life of the project as well as federal grants and tax credits from the CHIPS and Science Act, both of which are said to be critical to support hiring and capital investment.