Microchip expands silicon carbide (SiC) family of power electronics

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Microchip has announced its expanded its portfolio of smaller, lighter and more efficient SiC power modules.

The move comes as the demand for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight continues to grow, allowing engineers to create applications such as electric vehicles and charging stations as well as smart power grids, industrial and aircraft power systems that leverage SiC technology.

Microchip’s SiC family includes commercially qualified Schottky Barrier Diode (SBD)-based power modules in 700, 1200 and 1700V variants. The new power module family includes various topologies including Dual Diode, Full Bridge, Phase Leg, Dual Common Cathode and 3-Phase bridge, in addition to offering different current and package options.

The addition of SiC SBD modules simplifies designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module – helping to maximise switching efficiency, reduce thermal rise and allow for a smaller system footprint.

“SiC technology adoption and expansion is a driving force in today’s system innovation and Microchip is at the forefront, collaborating with customers across all segments and global regions,” said Leon Gross, vice president of Microchip’s Discrete Product Group business unit. “Our focus continues to be delivering reliable and innovative solutions.”

The portfolio of 700, 1200 and 1700V SiC SBD modules looks to utilise Microchip’s newest generation of SiC die, which maximises system reliability and ruggedness and enables stable and lasting application life. The devices’ high avalanche performance allows system designers to reduce the need for snubber circuits, and the body diode stability allows designs to use the internal body diode without long-term degradation.