Energy efficiency plays a critical role in electric devices when it comes to power consumption and product stability and this MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology to lower RDS(on) by 28%, as compared to the previous generation.
Based on the enhanced design of the core cell and termination, a high figure of merit can be achieved and an increase in the total gate charge can also be avoided, according to the company.
The MDT15N054PTRH is available in a surface mount device TO-Leadless (TOLL) package to reduce product size and improve heat dissipation. The energy efficiency is also significantly enhanced by fast switching, while enabling high power density.
In addition, a guaranteed operating junction temperature from -55°C up to 175°C and a high level of avalanche ruggedness helps the new MXT MOSFET to exceed the performance requirements of LEV motor controllers and BMSs.
“Beginning in 2008 we have released more than 40 MOSFET products for motor controllers and battery management systems and, since 2017, most of them have been made for LEV applications," said YJ Kim, CEO of Magnachip. “As a provider of high-performance MOSFETs, Magnachip will continue to deliver innovative solutions that meet the sophisticated requirements of the market.”
Product features
- low RDS(on) and switching loss
- great heat dissipation performance
- guaranteed operating junction temperature from -55°C up to 175°C
- a wide range of applications, such as LEV motor controllers and BMSs and switch mode power supplies for various consumer electronics
