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Magnachip expands 7th-Generation MXT LV MOSFET line up

Magnachip Semiconductor has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using Super-Short Channel technology.

These products further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

Super-Short Channel is Magnachip’s latest design technology to reduce Ron (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The Ron of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customised design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up addresses the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

Product features

  • 7th–generation silicon trench technology
  • Reduced Ron by approximately 24%~40% compared to the previous generations
  • Enhanced switching speed through low total gate charge
  • Outstanding thermal properties
  • Solutions for a wide range of mobile devices