'Ground breaking' GFETs now available

1 min read

Spanish graphene producer Graphenea, has announced a ground-breaking new range of graphene-based field effect transistors (GFETs) available for industrial and commercial use.

The range of ultrasensitive devices is intended to pave the way for major strides in data collection and parsing for companies and researchers, previously unable to acquire this technology without major investment.

Graphene field-effect transistors (GFETs) offers sensitivity levels higher than standard FETs, with specified carrier mobility above 1000 cm2/V.s, residual charge carrier density below 2x1012 cm2, and a Dirac point between 10 and 40V. This represents a significant advancement in the speed and effectiveness of data gathering, which leads to improvements in areas of research on biological, chemical, optical, magnetic, or molecular interactions, including biosensing, photodetecting, bioelectronics and chemical sensing.

Graphenea’s newly released GFETs are the latest in a range of graphene-based materials and devices, is intended to open up opportunities for tech companies in areas of research and data gathering previously restricted due to the high cost and specialist knowledge required to develop these devices in-house.

”Simply put, this new product line helps our customers to speed up the development and reduce the investment for a new graphene-based device.” says Graphenea’s CEO, Jesus de la Fuente.

The new products introduced comprise of two types of graphene field effect transistor matrices: GFET S-10 and GFET S-20. Both matrices offer 36 separate GFETs in an area of just 10mm2. The GFET S-10 is designed with GFET sensors distributed evenly across the die, with 30 sensors with Hall bar geometry and six with 2-probe geometry, allowing for varying measurement techniques. The GFETs on the S-20 are separated into four quadrants on the die. All sensors on the GFET S-20 have two-probe geometry. This configuration allows the application of a liquid drop on the device that doesn’t cover the pads, enabling measurements to be taken in a liquid environment or the functionalisation of sensors with a liquid medium.

Chip dimensions: 10 mm x 10 mm

Number of GFETs per chip: 36

Gate oxide material: SiO2

Gate oxide thickness: 90 nm

Graphene field-effect mobility: >1000 cm²/V.s

Residual charge-carrier density: <2x1012 cm-2

Yield: 75%

Graphenea is also able to provide a customised GFET design service to researchers and companies alike. This means clients can request a specific configuration of sensing devices tailored to their requirements.