This EPC2219 completed rigorous automotive AEC Q101 qualification testing including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests.
The company said that this GaN device will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
In addition to lidar in automotive applications, the EPC2219, with integrated reverse gate clamp diode and a 0.81 mm2 footprint is suited for driving GaN FETs in radar and ultrasonic sensors, satellite reaction wheels, high-frequency DC-DC conversion, wireless power, and class-D audio.
EPC’s wafer level chip-scale (WLCS) packaging was able to pass all the same testing standards created for conventional packaged parts, according to the company, demonstrating that the performance of its chip-scale packaging does not compromise either the device's ruggedness or reliability.
eGaN devices passing AEC Q101 testing are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.
EPC’s CEO and co-founder Alex Lidow said, “This new automotive product is the latest addition to a growing family of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety.”