Vishay Intertechnology has introduced a 200 V n-channel MOSFET offering an industry-low typical on-resistance of 61 mΩ at 10 V in a 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package.

The device also offers an improved on-resistance times gate charge - a critical figure of merit (FOM) for MOSFETs used in switching applications - of 854 mΩ*nC. Purpose-built to increase power density, the space-saving Siliconix SiSS94DN is said to be 65 % smaller than devices with similar on-resistance in 6 mm by 5 mm packages.

Vishay claims that the on-resistance of the TrenchFET Gen IV power MOSFET is 20% lower than the next best product on the market in a similar package size, and its FOM is 17% lower than the previous-generation solution. These values result in reduced conduction and switching losses to save energy. With its compact size, the flexible device has been designed to allow designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or a similar sized MOSFET with higher conduction losses.

The SiSS94DN is intended for primary-side switching for isolated DC/DC topologies and synchronous rectification in telecom equipment, computer peripherals, and consumer electronics; LED backlighting for notebooks, LED TVs, vehicles, and vessels; and motor drive control, load switching, and power conversion for GPS, factory automation, and industrial applications.

The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.