The Vishay Siliconix SiZF300DT delivers increased power density and efficiency, while reducing component counts and simplifying designs and is intended to be used for power conversion in computing and telecom applications.
The two MOSFETs in the device are internally connected in a half-bridge configuration. The Channel 1 MOSFET provides maximum on-resistance of 4.5 mΩ at 10 V and 7.0 mΩ at 4.5 V. The Channel 2 MOSFET features on-resistance of 1.84 mΩ at 10 V and 2.57 mΩ at 4.5 V. Typical gate charge for the MOSFETs is 6.9 nC and 19.4 nC, respectively.
The SiZF300DT is 65 % smaller than dual devices in 6 mm by 5 mm packages with similar on-resistance, making it one of the most compact integrated products on the market. The device provides designers with a space-saving solution for point-of-load (POL) conversion, power supplies, and synchronous buck and DC/DC converters in graphic and accelerator cards, computers, servers, and telecom and RF networking equipment.
The dual MOSFET features, according to Vishay, a unique pin configuration and construction that delivers up to 11 % higher output current per current phase than competing products in the same footprint area, in addition to higher efficiency for output current above 20 A. The device's pin configuration and large PGND pad also enhance thermal transfer, optimize the electrical path, and enable a simplified PCB layout.
The SiZF300DT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.