UnitedSiC announces six new D2PAK-7L SiC FETs

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has expanded its FET portfolio with the introduction of six new 650V and 1200V options, all housed in the industry standard D2PAK-7L surface mount package.

Available in 30, 40, 80 and 150mΩ versions, these latest SiC FETs represent, according to the company, another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC-DC converters.

The D2PAK-7L SiC FETs support significantly heightened switching speeds, with a Kelvin source connection improving gate drive return performance, as well as offering industry-leading thermal capabilities. Through the utilisation of Ag Sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate (IMS) arrangements. In addition, they exhibit excellent creepage and clearance figures of 6.7mm and 6.1mm respectively - meaning the highest degrees of operational safety can be assured even at elevated voltages.

The new D2PAK-7L devices are fully supported by UnitedSiC’s FET-Jet Calculator. Utilising this free online resource, engineers can assess the different operational parameters needed for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design requirements quickly and with confidence.