Ultra-low power SRAM IP

SureCore's latest ultra-low power SRAM IP technology is said to extend battery life and reduce both static and dynamic power through its patented suite of circuit design techniques. This is crucial for developers of wearable electronics and IoT applications.

"As the semiconductor industry addresses many diverse leading-edge applications ranging from Wearables to IoT to Cloud Computing, and even Automotive, the key challenges to the creation of both innovative and commercially competitive products are going to be power consumption, heat dissipation and battery life. SureCore is dedicated to minimising both dynamic and static power to help bring the promise of these technologies to fruition," Paul Wells, SureCore ceo, said.

SureCore's 28nm FDSOI SRAM IP is the first product on a roadmap that includes the introduction of a 40nm, Bulk CMOS, Ultra Low-Power SRAM later this year. Work is also under way on a 28nm, Bulk CMOS solution.

SureCore's silicon proven, 28nm FDSOI production design targets applications demanding long battery life with minimal operating and stand-by power performance. With an operating voltage range of 0.7 to 1.2V, the Single Port SRAM is said to provide power savings of up to 50% compared to current commercial offerings.