Small signal MOSFETs
Diodes has unveiled three small signal MOSFETs in the DFN0606 package. The 20V and 30V rated N-channel transistors and a the 30V rated P-channel device have a footprint of 0.6 x 0.6mm and a power dissipation of 300mW.
The DMN2990UFZ (20V nMOS), the DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimise on-state resistance, whilst maintaining good switching performance. In addition, a typical threshold voltage of less than 1V is said to mean a lower 'turn on', suiting single-cell operation.
The devices are suited for use in high efficiency power management circuitry and as general purpose interfacing and simple analogue switches.
