Diodes has introduced the DMC1028UFDB complementary MOSFET pair. Aimed at increasing the power density of DC/DC converters, the MOSFET pair integrates an N-channel and a P-channel MOSFET in a DFN2020 package. The design is customised for point-of-load converters that step down from 3.3V to 1V for core voltage supply to ASICs.

The overall power density of the DMC1028UFDB is doubled by combining the P-channel and N-channel devices as a complementary MOSFET pair, in a single DFN2020 package relative to individual MOSFETs in the same footprint package.

The performance parameters of the DMC1028UFDB MOSFETs have been optimised to maximise efficiency in 3.3V to 1V buck converters while driving loads up to 3A. These include a 19mO RDS(ON)at Vgs=3.3V for the low-side N-channel MOSFET, and a low gate charge of 5nC at Vgs=3.3V for the P-channel MOSFET, to minimise switching losses.

This high switching performance makes the DMC1028UFDB suitable for high-efficiency power management applications such as Ethernet network controllers and processors used in equipment such as routers, network interface controllers, switches, digital subscriber line adaptors, servers, and set-top boxes.