MOSFETs offer fast switching performance, low on-resistance
Advanced Power Electronics has launched two new N channel power MOSFETs, offering fast switching performance and low on-resistance.
Both devices are well suited to low voltage applications such as DC/DC converters, and are available in TO-263 or TO-220 through-hole package.
The MOSFETs benefit from simple drive requirements and offer a fast switching performance, low on-resistance of only 2.5mO, a drain-source breakdown voltage of 30V and a continuous drain current of 120A.
The components are halogen-free and fully RoHS compliant.
