Redefining power-conversion efficiency

STMicroelectronics’ MDmesh DM2 N-channel Power MOSFET transistors are claimed to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices.

As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music files, the need to minimise energy consumption in the huge server farms that host the cloud, in the telecom networks that provide the means to connect anyone to anything, and where the data is ultimately used, continues to increase. ST is addressing this challenge with what it claims is the world's best power-density solution, combining the most advanced power-transistor structure with a compact, cost-effective, and thermally-efficient PowerFLAT 8x8 HV packaging technology.

The MDmesh DM2 power-transistors comprise a range of super-junction Power MOSFETs with integrated fast-recovery diodes and breakdown voltages up to 650V. The combination of technical parameters - low gate charge, input capacitance and resistance, fast recovery phase of the intrinsic diode, low recovery charge (Qrr) and recovery time (Trr) and the industry's best soft-switching performance – are said to place these devices ahead of competitive offerings.

ST’s MDmesh DM2 Power MOSFET devices are available in multiple package/breakdown-voltage combinations.